tsp5n60m/TSF5N60M 600v n-channel mosfet features 4.5a,600v,rds(on)=2.2 ? @vgs=10v gate charge (typical 17nc) high ruggedness fast switching 100% avalanchetested improved dv/dt capability general description this power mosfet is produced using truesemi?s advanced planar stripe, dmos technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. this power mosfet is usually used at ac adaptors, on the battery charger and smps absolute maximum ratings symbol parameter tsp5n60m TSF5N60M units vdss drain to source voltage 600 v continuous drain current(@tc = 25c) 4.5 4.5* a id continuous drain current(@tc = 100c) 2.7 2.7* a idm drain current pulsed (note 1) 18 18* a vgs gate to source voltage 30 v eas single pulsed avalanche energy (note 2) 280 mj ear repetitive avalanche energy (note 1) 13 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns total power dissipation(@tc = 25 c) 120 45 w pd derating factor above 25 c 0.8 0.5 w/ c tstg, tj operating junction temperature & storage temperature -55 ~ 150 c tl maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter tsp5n60m TSF5N60M units r jc thermal resistance, junction-to-case 1.25 3.79 c/w r cs thermal resistance, case-to-sink typ 0.5 0.5 c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w 1/7 www..net
tsp5n60m/TSF5N60M electrical characteristics ( tc = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 600 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c -- 0.4 -- v/c v ds = 600v, v gs = 0v -- -- 10 ua i dss drain-source leakage current v ds = 480v, t c = 125 c -- -- 100 ua gate-source leakage, forward v gs = 30v, v ds = 0v -- -- 100 na i gss gate-source leakage, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 2.0 -- 4.0 v r ds(on) static drain-source on-state resis- tance v gs =10 v, i d = 2.25a -- 2.0 2.2 ? dynamic characteristics c iss input capacitance -- 545 780 c oss output capacitance -- 60 80 c rss reverse transfer capacitance v gs =0 v, v ds =25v, f = 1mhz -- 8 11 pf dynamic characteristics t d(on) turn-on delay time -- 10 30 t r rise time -- 35 80 t d(off) turn-off delay time -- 45 100 t f fall time v dd =300v, i d =4.5a, r g =25 ? (note 4, 5) -- 40 90 ns q g total gate charge -- 17 -- q gs gate-source charge -- 2.8 -- q gd gate-drain charge(miller charge) v ds =480v, v gs =10v, i d =4.5a (note 4, 5) -- 6.2 -- nc source-drain diode ratings and characteristics symbol parameter test conditions min. typ. max. unit. i s continuous source current integral reverse p-n junction -- -- 4.5 i sm pulsed source current diode in the mosfet -- -- 18 a v sd diode forward voltage i s =4.5a, v gs =0v -- -- 1.4 v t rr reverse recovery time i s =4.5a, v gs =0v,di f /dt=100a/us -- 300 -- ns q rr reverse recovery charge i s =4.5a, v gs =0v,di f /dt=100a/us -- 2.2 -- uc notes 1. repeativity rating : pulse width limited by junction temperature 2. l = 25.0mh, i as =4.5a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd 4.5a, di/dt 200a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature 2/7 www..net
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